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SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
MRF428
Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. * Specified 50 Volt, 30 MHz Characteristics -- Output Power = 150 W (PEP) Minimum Gain = 13 DB Efficiency = 45% * Intermodulation Distortion @ 150 W (PEP) -- IMD = -32 db (Max) * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW
150 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Withstand Current -- 10 s Total Device Dissipation @ T C = 25 C Derate above 25 C Storage Temperature Range Symbol VCEO VCBO VEBO IC -- PD Tstg Value 55 110 4.0 20 30 320 1.83 -65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.5 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 55 110 110 4.0 -- -- -- -- -- -- -- -- Vdc Vdc Vdc Vdc (continued)
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25 C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30 -- --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) COB -- 220 250 pF
FUNCTIONAL TESTS
Common-Emitter Amplifier Gain (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, f = 30 MHz) Output Power (VCE = 50 Vdc, f = 30 MHz) Collector Efficiency (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, f = 30 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, POUT = 150 W (PEP), IC = 3.32 Adc) Electrical Ruggedness (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, VSWR 30:1 at all Phase Angles) GPE 13 15 -- dB
POUT
150
--
--
W (PEP)
45
--
--
%
IMD
--
-33
-30
dB
No Degradation in Output Power
NOTE: 1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
C1,C2,C7 -- 170-780 pF, Arco 469 C3,C8,C9 -- 0.1F, 100 V Erie C4 -- 500 F @ 6.0 V C5 -- 9.0-180 pF, Arco 463 C6 -- 80-480 pF, Arco 466 C10 -- 30 F, 100 V R1 -- 10 , 10 Watt
R2 -- 10 , 1.0 Watt CR1 -- 1N4997 L1 -- 3 Turns, #16 Wire, 5/16" I.D., 5/16" Long L2 -- 10 H Molded Choke L3 -- 12 Turns, #16 Enameled Wire Closewound, 1/4" I.D. L4 -- 5 Turns, 1/8" Copper Tubing, 9/16" I.D., 3/4" Long L5 -- 10 Ferrite Beads -- Ferroxcube #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
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3
Figure 10. Series Equivalent Impedance
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PACKAGE DIMENSIONS
STYLE 1: PIN 1 EMITTER PIN 2 BASE PIN 3 EMITTER PIN 4 COLLECTOR
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION INCH.
INCHES DIM A B C D E H J K M Q R U MIN 0.960 0.465 0.229 0.216 0.084 0.144 0.003 0.435 MAX 0.990 0.510 0.275 0.235 0.110 0.178 0.007 --
MILLIMETERS MIN 24.39 11.82 5.82 5.49 2.14 3.66 0.08 11.05 45 NOM 2.93 6.25 18.29 3.30 6.47 18.54 MAX 25.14 12.95 6.98 5.96 2.79 4.52 0.17 --
45 NOM 0.115 0.246 0.720 0.130 0.255 0.730
Case 211-11
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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